Samsung Electronics announced on December 20 that it began to mass-produce 10-nanometer class (1y-nm), 8-gigabit (Gb) DDR4 DRAM last month. According to the company, it features the highest performance and energy efficiency and smallest dimensions for an 8Gb DRAM chip.
To enable these achievements, Samsung said it applied new technologies, without the use of an EUV process. The mass production of the second-generation DRAM is regarded as another quantum leap of Samsung Electronics following the company's mass production of 1x-nm DRAM initiated in February previous year. It says that the latest DRAM chip is 15 percent more power efficient and 10 percent faster than its predecessor.
Gyoyoung Jin, the President of Memory Business at Samsung Electronics states that the tech giant will rapidly be expanding production and continue to strengthen its stronghold in the market.More news: State Suing Brown Co. Hotel For Fining Guest $350 For Bad Review
The chips feature a "newly devised data sensing system" that enables a more accurate determination of the data stored in each memory cell. Also, Samsung is focusing on other memory technologies like DDR5, LPDDR5, GDDR6, and HBM3 which find their use in a number of mobile devices, high-end GPUs, HPC systems, etc.
Samsung has said that its 8GB 2nd-generation 10-Nanometer Class DRAM is created to be used in a wide range of next generation computers. They are also faster to manufacture - Samsung claims 30 percent productivity gain over the prior generation. What that means is that the production yields have increased which will enable the company to build more of these chips in the same time.
The new 10 nm-class DRAM also makes use of a unique air spacer that has been placed around its bit lines to dramatically decrease parasitic capacitance.