Samsung announced that it is starting mass production of upgraded memory technology today-the first 512GB embedded universal flash storage (eUFS) device made for mobile devices, including smartphones and tablets. The company yet has to confirm whether it will use the new storage solution for the Galaxy S9, but it is possible that the upcoming flagship smartphone from Samsung could have a 512 GB option. Samsung says the chip consists of eight 64-layer 512GB V-NAND chips, but what's interesting is that although it doubles the storage and density of Samsung's 256GB chip, it takes up the same amount of physical space. "By assuring an early, stable supply of this advanced embedded storage, Samsung is taking a big step forward in contributing to timely launches of next-generation mobile devices by mobile manufacturers around the world". Nothing is impossible these days. Despite the increased number of layers, it still have the same size as the company's previous 48-layer V-NAND 256GB solution.
The new solution is also really fast, allowing users to "store approximately 130 [10 minute] 4K Ultra HD video clips", a feat that might make the experience very sluggish on current storage solutions. Using UFS proved to be the right decision for Samsung, as it achieved much better performance than eMMC, which was predominantly used by Android phones at the time.More news: Billy Bush on infamous "Access Hollywood" tape: "Enough's enough"
Sequential read and writes reaching up to 860 megabytes per second (MB/s) and 255MB/s respectively.
For random operations, the new eUFS can read 42,000 IOPS and write 40,000 IOPS. The company says that this is around 400 times faster than a conventional microSD card.
On a related note, Samsung intends to steadily increase an aggressive production volume for its 64-layer 512Gb V-NAND chips, in addition to expanding its 256Gb V-NAND production. Still, we do know Samsung has a habit of using a bunch of similar specs on these two classes and we don't expect anything different come 2018.